- Effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input.
- Switch Current up to 1.8A. Low Shutdown Current ( Rds (ON) DMOS FET.
- BST82, datasheet for BST82 - SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET provided by Zetex Semiconductors. BST82 pdf documentation and BST82 application notes, selection guide.
- DMOS West Des Moines 6001 Westown Parkway West Des Moines, IA 50266. DMOS Des Moines 1301 Penn Ave., Suite 213 Des Moines, Iowa 50316. DMOS Ankeny 350 NE 36th Street Ankeny, IA 50021. Call: 515.224.1414. Braces & Support Foot & Ankle, Podiatry Hand Therapy Hand & Upper Extremity Hip Interventional Physiatry.
P Channel Dmos Fet
Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Dmos Fets
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| Datasheets found :: 2629 | Page: | 1 | 2 | 3 | 4 | 5 | |
| Nr. | Part Name | Description | Manufacturer |
| 1 | 08090 | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | Infineon |
| 2 | 2N2530N3 | 300V N-channel enhancement - Mode vertical DMOS FET | Supertex Inc |
| 3 | 2N2530N8 | 300V N-channel enhancement - Mode vertical DMOS FET | Supertex Inc |
| 4 | 2N2535N3 | 350V N-channel depletion - Mode vertical DMOS FET | Supertex Inc |
| 5 | 2N2535N5 | 350V N-channel depletion - Mode vertical DMOS FET | Supertex Inc |
| 6 | 2N2540N3 | 400V N-channel depletion - Mode vertical DMOS FET | Supertex Inc |
| 7 | 2N2540N5 | 400V N-channel depletion - Mode vertical DMOS FET | Supertex Inc |
| 8 | 2N2540N8 | 350V N-channel depletion - Mode vertical DMOS FET | Supertex Inc |
| 9 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 10 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 11 | 2N7000 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Diodes |
| 12 | 2N7000 | DMOS Transistors (N-Channel) | General Semiconductor |
| 13 | 2N7000 | N-Channel Enhancement-Mode Vertical DMOS FET | Supertex Inc |
| 14 | 2N7000 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
| 15 | 2N7000P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Diodes |
| 16 | 2N7000P | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | Zetex Semiconductors |
| 17 | 2N7002 | DMOS Transistors (N-Channel) | General Semiconductor |
| 18 | 2N7002 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 19 | 2N7007 | N-Channel Enhancement-Mode Vertical DMOS FET | Supertex Inc |
| 20 | 2N7008 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 21 | 2SJ448(JM) | Pch vertical DMOSFET MP-45F | NEC |
| 22 | 2SJ449(JM) | Pch vertical DMOS FET MP-45F | NEC |
| 23 | 2SK2133 | N-channel enhancement type DMOS FET | NEC |
| 24 | 2SK2133-Z | N-channel enhancement type DMOS FET | NEC |
| 25 | 2SK2133-Z-E1 | N-channel enhancement type DMOS FET | NEC |
| 26 | 2SK2135(JM) | N-channel enhancement type DMOS FET | NEC |
| 27 | 2SK2141(JM) | N-channel enhancement type DMOS FET | NEC |
| 28 | 2SK2356-Z-E1 | N-channel enhancement type DMOS | NEC |
| 29 | 2SK2359-Z | N-channel enhancement type DMOS | NEC |
| 30 | 2SK2360-Z | N-channel enhancement type DMOS | NEC |
| Datasheets found :: 2629 | Page: | 1 | 2 | 3 | 4 | 5 | |
Dmos Rf Fet
| Номер произв | ZVN3310F | |||
| Описание | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |||
| Производители | Zetex Semiconductors | |||
| логотип | ||||
1Page
MODE VERTICAL DMOS FET FEATURES * RDS(on)= 10Ω S COMPLEMENTARY TYPE - ZVP3310F G PARAMETER Continuous Drain Current at Tamb=25°C Gate-Source Voltage Operating and Storage Temperature Range VDS IDM Ptot SOT23 100 2 330 UNIT mA V °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltage 100 Gate-Source Threshold VGS(th) 0.8 2.4 V Gate-Body Leakage Drain Current IDSS 1 On-State Drain Current(1) 500 Resistance (1) nA VGS=± 20V, VDS=0V µA VDS=80V, VGS=0V, T=125°C(2) Ω VGS=10V, ID=500mA (1)(2) 100 Input Capacitance (2) Output Capacitance (2) Coss 15 pF VDS=25V, VGS=0V, f=1MHz (2) Turn-On Delay Time (2)(3) Turn-Off Delay Time (2)(3) td(on) td(off) 3 typ 4 typ 5 6 ns ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
TYPICAL CHARACTERISTICS VDS= 25V 80 0 ID- Drain Current (Amps) 50 30 20 0 Coss 10 20 30 40 50 Capacitance v drain-source voltage 1.4 1.0 0.6 0.2 02 4 6 8 Saturation Characteristics 10V 8V 6V 4V 10 20V 50V 80V 14 ID=0.6A 10 6 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Gate charge v gate-source voltage 10 1A 0.2A 1 10 20 On-resistance vs gate-source voltage 2.2 1.8 1.4 ID=-0.5A RDS(on) 0.8 Gate Threshold Voltage VGS(th) 0.4 T-Temperature (C°) 3 - 397 | ||||
| Всего страниц | 2 Pages | |||
| Скачать PDF | [ ZVN3310F.PDF Даташит ] | |||